发明名称 SINTERED ALUMINIUM NITRIDE HEAT DISSIPATION PLATE AND MANUFACTURE THEREOF
摘要 PURPOSE:To obtain a heat dissipation plate having high density and high thermal conductivity by employing a compound containing AlN, a rare earth aluminium compound, and one kind or more of group IVa, Va, VIa, VIIa or VIII transition element. CONSTITUTION:A compound containing AlN, a rare earth aluminium compound, and at least one kind of group IVa, Va, VIa, VIIa or VIII transition element is employed. For example, an AlN powder containing 1.0wt.% of oxygen, as an impurity, is admixed with 1wt.% of first additive, i.e., CaCO3, and 3.0wt.% of second additive, i.e., ZrO2, and ground. The material is then admixed with 7wt.% of binder, i.e., paraffin, and granulated before being pressed under pressure of 300kg/cm<2>. The green compact is then heated at 700 deg.C in nitriding gas atmosphere to remove paraffin and sintered under normal temperature for two hours at 1800 deg.C in nitriding gas atmosphere.
申请公布号 JPH07176656(A) 申请公布日期 1995.07.14
申请号 JP19940196588 申请日期 1994.08.22
申请人 TOSHIBA CORP 发明人 KASORI MITSUO;SHINOZAKI KAZUO;ANZAI KAZUO;UENO FUMIO;HORIGUCHI AKIHIRO;TSUGE AKIHIKO;IMAGAWA HIROSHI;TAKANO TAKESHI;INOUE HIROSHI
分类号 H01L23/373;C04B35/581 主分类号 H01L23/373
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