| 摘要 |
PURPOSE:To provide a gallium phosphide green light emitting diode that emits green light of high luminance, and a method for its manufacture. CONSTITUTION:The gallium phosphide green light emitting diode consists of a n-type gallium phosphide substrate; a n-layer 4 that is formed on the substrate and that contains in proximity to its surface, positioned on the opposite side to the substrate, impurities of a concentration lower than that of impurities in the substrate; and a p-layer 8 that is formed on the n-layer 4. The p-layer 8 is formed so that it will includes a high concentration region 16 and a low concentration region 7. The high concentration region 6 contains impurities of a higher concentration in proximity to the p-n junction than in proximity to the surface of the n-layer 4. The low concentration region 7 contains impurities of a lower concentration on the side of its surface than that of impurities in the high concentration region 6. |
