| 摘要 |
PURPOSE:To improve transit property of electrons by introducing an Si-F bond to an inner structure of a film to set an optical band gap to a specific value or more and to set a spin density to be measured by an electron spin resonance (ESR) method to a specific value or less. CONSTITUTION:Fluorine is introduced into raw gas or diluted gas thereby to introduced Si-F bond to an inner structure of a film, a Dangling bond due to Si is terminated, and a defect level in a non-single crystalline silicon carbide film is reduced. Thus, the film in which an optical band gap is set to 2.2eV or more and a spin density measured by an electron spin resonance (ESR) method is 2X10<18>cm<-3> or less is formed. When this film is used, an element which has excellent electric characteristics for improving transit property of electrons disturbed by many defect levels in a conventional film can be formed. |
