| 摘要 |
<p>PURPOSE:To attain formation of an emitter of uniform quality while improving through-put of an evaporation material by forming the emitter by two different evaporation methods. CONSTITUTION:Films of an amorphous silicon layer 122, insulating layer 124 and a gate electrode layer 125 are molded on a substrate 121, and a photoresist layer 126 is formed by applying a mask to the electrode layer 125, to open a hole 130 in the electrode layer 125 by etching. Next, a separation layer 127 is evaporated to open the hole 130 in the insulating layer 124 by isotropic etching, and from this hole 130, by an ICB evaporation method, a low melting point metal is evaporated as an emitter material. Then from the hole 130, the emitter material is evaporated in a vertical direction. and a cone-shaped emitter 115 is formed on a resistance layer 123. After the emitter 115 is formed, the emitter material deposited on the electrode layer 125 is removed with the separation layer 127, and next by an electron beam evaporation method or low pressure spatter method and the like, the high melting point metal is evaporated for a short time, to form a coating layer 115A on a surface of the emitter 115.</p> |
