| 摘要 |
<p>PURPOSE:To decrease the number of processes and to improve the production yield by constituting source electrodes, drain electrodes and video signal lines of a transparent conductive material the same as that of pixel electrodes and forming these members at one time. CONSTITUTION:The source electrode SD1 and the drain electrode SD2 consists of laminated films of a first conductive film d1 and a second conductive film d2 and are formed on a N(+) semiconductor layer d0. The first conductive film d1 is formed out of a molybdenum silicide film and the second conductive film d2 is formed out of a transparent conductive film ITO1 such as indium tin oxide. The pixel electrode consists of a transparent conductive film ITO1 and is connected to the source electrode SD1 of a thin film transistor and is formed in one body with the second conductive film d2 which constitutes the thin film transistor. In this case, the N(+) semiconductor layer d0, source electrode SD1 and drain electrode SD2 have almost the same surface pattern. Thus, the channel length of a thin film transistor TFT can be controlled with good accuracy.</p> |
