| 摘要 |
<p>PURPOSE:To form a durable phase-shifting mask capable of being used for a long period and with the absorption of exposure wavelength by an etching stopper layer reduced. CONSTITUTION:A silicon-rich silicon oxide film 2 is formed on a mask substrate 1 by plasma CVD while fixing the flow rate ratio of gaseous SiH4 to gaseous N2O at >=0.8. A chromium film 3 is formed on the film 2 by sputtering. A resist is applied on the film 2, exposed in a desired pattern and developed to form a resist pattern. The chromium film 3 is etched with a chlorine-base gas with the resist pattern as the mask to pattern the film 3. A silicon oxide film 4 is formed while fixing the flow rate ratio of the gaseous SiH4 to gaseous N2O at <=0.1. A resist is applied to the film 4, and the resist is patterned while leaving only the phase shifter forming part. The substrate is etched by a chlorinebase gas to form a phase shifter.</p> |
