| 摘要 |
PURPOSE:To improve operational speed in PROM circuit and reliability in programming, by forming a compound of a metallic layer with a semiconductor layer while a given electrical signal is applied to a word line and a bit line corresponding to each memory, and putting an antifuse in a low-resistance state. CONSTITUTION:At first, a voltage sufficient to break down a silicon layer 207 is applied across a tungsten layer 208 as an antifuse upper electrode and an n<+>-type layer 203 that is adjacent to a tantalum layer 206 as a lower electrode. When the silicon layer 207 is broken down, a large current is carried there to generate heat, and the silicon layer 207 and metallic layers 206 and 208 are reacted by the heat to each other. Then, a silicide compound 209 is produced so that the antifuse is short circuited. In this antifuse structure, since a silicide compound 201 is also produced between a metallic layer 206 and the n<+>-type layer 203, contact resistance between the metallic layer 206 and the n<+>-type layer 203 is reduced, and thereby read-out is carried out at high speed. |
