发明名称 PHOTOMASK, PRODUCTION OF PHOTOMASK, EXPOSURE METHOD AND PRODUCTION OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To obtain the optimum condition by combining one of the parameters with plural data in the other preset two ranges and obtaining the allowable range in the combination to find out the correlation of the combinations. CONSTITUTION:One among the defocus tolerance, mask pattern size tolerance II and exposure tolerance I is combined with plural data in the other preset two ranges, and the allowable range III is obtained from the combinations to determine the optimum value. As a result, the correlation of many parameters, e.g. 3, is found out, and the optimum condition is obtained from the correlation. Consequently, the departure from the actual condition is reduced, various performances are quantitatively seized, and the time and cost are reduced. Further, the effect of the variance in the mask pattern size, etc., can be considered, and actual optimization is made possible.
申请公布号 JPH07175204(A) 申请公布日期 1995.07.14
申请号 JP19940069113 申请日期 1994.03.14
申请人 SONY CORP 发明人 TSUDAKA KEISUKE;SUGAWARA MINORU
分类号 G03F1/68;G03F1/70;G03F7/20;G03F9/02;H01L21/027 主分类号 G03F1/68
代理机构 代理人
主权项
地址