| 摘要 |
PURPOSE:To extract oscillation light in a fundamental transverse mode from a verditer blue group II-VI semiconductor laser. CONSTITUTION:A striped ridge is formed on a P-type ZnMgSSe clad layer 5 and thereafter, an N-type SixGe1-x layer 6 is formed outside of the ridge. As the constituent atoms of the layer 6 are a group IV element, the conductivity type of the layer 5 is not changed even if an interdiffusion is performed in the layer 5 adjacent to the layer 6. Accordingly, the generation of a reactive current due to inversion of the conductivity type of the clad layer can be suppressed. |
