| 摘要 |
The method includes the steps of depositing a polysilicon layer (2) on a lower layer (1), implanting inert gas ions into the polysilicon layer (2) using an ion implanter, forming a photoresist film pattern (3) on the polysilicon layer (2), and etching the exposed polysilicon layer using an inclined-etching method to forma polysilicon pattern with an inclined surface (2A) at the side wall portions, thereby improving the step coverage with a good reproductibility.
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