| 摘要 |
1,111,462. Semiconductor devices; tuning resonators. INTERNATIONAL STANDARD ELECTRIC CORPORATION. 1 April, 1966 [3 April, 1965], No. 14525/66. Heading H1K and H1W. As shown, Fig. 1, a varactor diode 1 is mounted in a housing 2, 3, 4 which includes a conductive portion 5 capacitatively coupled to the lead 7. The capacitative connection is used to eliminate the effects of the lead inductance by by-passing r.f. signals. Diode 1 may be of silicon and may be produced by an alloying or planar method, cupshaped housing part 4 may be of insulating material or of metal, and housing part 2 is of a material having a high dielectric constant, e.g. a ceramic or plastics material. Diode 1 may be held against flange 3 of housing part 2 by a resilient member attached to lead 6. The arrangement may be mounted in the wall of a cavity resonator by means of conductive portion 5 which may be silvered if it is to be soldered, Fig. 2 (not shown), or provided with a threaded portion so that it may be screwed into an aperture, Fig. 3 (not shown) or secured by means of a locknut. Lead 6 extends across the cavity resonator and is soldered to the opposite wall. |
