METHOD OF MAKING HIGH INTEGRATED CONTACT USING ION IMPLANTION

摘要

The method includes the steps of forming an interlayered insulation layer (11) on a lower conduction layer (10) to form a photoresist layer with an opening part thereon, forming an impurity layer (15) on the exposed layer (11) using an inclined ion implantation to form a damage layer, isotropically etching the insulation layer (11) with a slow inclined surface, and anisotropically etching the layer (11) to expose the lower conduction layer (10), thereby forming an inclined micro-contact hole.