发明名称 |
High withstand voltage M I S field effect transistor and semiconductor integrated circuit |
摘要 |
A semiconductor integrated circuit device is provided in which a highly reliable and low cost intelligent power semiconductor is mounted on the same substrate as that of a control circuit having a logic element, such as a low withstand voltage CMOS etc., and high withstand voltage and high current output MIS field effect transistor. A high withstand voltage MOSFET is composed of a vertical MOS portion 25 formed in one side of a laterally widened well layer 2 and a drain portion formed in the other side thereof and a second base layer 4 is formed on the surface of the well layer 2. Accordingly, a depletion layer widened just under the MOS portion 25 and the second base layer 4 develops a JFET effect at OFF time thereby realizing a high withstand voltage and reliability is provided since the generation of hot carriers can be prevented by the second base layer 4.
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申请公布号 |
US5432370(A) |
申请公布日期 |
1995.07.11 |
申请号 |
US19940319774 |
申请日期 |
1994.10.07 |
申请人 |
FUJI ELECTRIC CO., LTD. |
发明人 |
KITAMURA, AKIO;FUJISHIMA, NAOTO;TADA, GEN |
分类号 |
H01L21/8238;H01L27/04;H01L27/088;H01L27/092;H01L29/06;H01L29/10;H01L29/40;H01L29/78;(IPC1-7):H01L29/10 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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