发明名称 |
Process for producing semiconductor spheres |
摘要 |
A method of manufacturing semiconductor particles (30) of uniform mass. A template (12) is used to meter out uniform mass piles (28) of semiconductor feedstock upon a refractory layer (14). These piles (28) of semiconductor feedstock are then melted briefly to obtain semiconductor particles (30) of uniform mass. Silica is the preferred refractory layer, and is separated from the particles after the melt procedure. Subsequent melt procedures can be implemented to ultimately obtain perfect spheres of the semiconductor material. The present invention is well suited for forming semiconductor spheres to be implemented in photovoltaic solar cells. Semiconductor grade or metallurgical grade feedstock can be implemented to obtain particles of high purity. High yields of uniformly massed spheres can be obtained to produce high efficiency photovoltaic cells at a moderate cost.
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申请公布号 |
US5431127(A) |
申请公布日期 |
1995.07.11 |
申请号 |
US19940323317 |
申请日期 |
1994.10.14 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
STEVENS, GARY D.;CONKLIN, HARVEY L. |
分类号 |
H01L31/0352;H01L31/18;(IPC1-7):H01L31/18 |
主分类号 |
H01L31/0352 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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