IMPURITIES DIFFUSION METHOD IN SEMICONDUCTOR

摘要

The method comprises the steps of; vapor-depositing fluoride thin film (2) on the semiconductor substrate (1); inspecting an electron beam on the fluoride thin film (2) using accelerating energy of 1-500 KeV and dosing amount of 0.1-10 coulomb/cm2; resolving fluoride component to form a metal film (3); vapor- depositing a protecting film (4) on the metal thin film (3); and diffusing impurity into the semiconductor substrate (1) by heat treatment.