发明名称 |
Continuous thin diamond film and method for making same |
摘要 |
A continuous thin diamond film having a thickness of less than about 2 microns has a permeability to helium lower than about 1x10-6 standard cubic centimeters of helium per second per square millimeter of surface area. The thin diamond film may be supported on a supporting grid and may be incorporated into an x-ray window. The thin diamond film of the present invention may be formed in a two-stage growth process wherein a first stage a carbonaceous gas at a first concentration is introduced in to the reactor and in a second stage the concentration of the carbonaceous gas is reduced to a second lower concentration.
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申请公布号 |
US5432003(A) |
申请公布日期 |
1995.07.11 |
申请号 |
US19910747948 |
申请日期 |
1991.08.21 |
申请人 |
CRYSTALLUME |
发明人 |
PLANO, LINDA S.;PETERS, MICHAEL G.;RAVI, KRAMADHATI V.;PINNEO, JOHN M. |
分类号 |
C23C16/27;C30B25/02;G03F1/14;G21K1/00;(IPC1-7):B32B9/00 |
主分类号 |
C23C16/27 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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