| 摘要 |
A semiconductor layer comprises a first cladding layer of a first conductivity type on a substrate, an active layer laminated on the first cladding layer, a second cladding layer of a second conductivity type laminated on the active layer, and a current confinement layer on the second cladding layer. The first cladding layer, the active layer and the second cladding layer are made of a II-VI group compound semiconductor and the current confinement layer is made of a metal oxide whose thermal conductivity is equal to or larger than 0.01 cal/cmxsx DEG C. A silicon layer is provided between the current confinement layer and an electrode. The current confinement layer is provided on an upper portion of a p type semiconductor layer. With the semiconductor laser made of the II-VI group compound semiconductor of a ZnSe system or the like, a heat-radiation characteristic thereof can be improved and long-time operation thereof is made possible.
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