Verfahren zum epitaktischen Abscheiden einer einkristallinen Halbleiterschicht aus der Gasphase

摘要

In a process for the production of a semi-conductor arrangement by deposition from the vapour phase on to a heated carrier from a gas mixture containing a compound or compounds which on contact with said carrier will deposit semi-conductor material thereon, the said carrier is a monocrystalline plate of semi-conductor material the faces of which are (110) and (110) planes of the crystal one of the faces of which is roughened by mechanical treatment so that epitaxial growth takes place substantially exclusively thereon. The faces of the carrier plate may be natural (110)-planes of cleavage produced by mechanical breaking, one of the mutually opposite planes being roughened, for example, by lapping at a small angle. One face may be a natural plane of cleavage whilst the other face is manufactured by a mechanical cutting process such as sawing. The gas mixture may be produced by passing a reaction gas which converts the semi-conductor material to a gaseous substance or substances such as bromine or iodine over solid semi conductor material which is to be deposited in the reaction vessel used for the deposition reaction. The semi-conductor material is of the same or different conductivity type and/or conductivity as the carrier and may be an AIIIBV compound such as gallium arsenide. The carrier may be heated to 1000 DEG C.