ANTI REFLECTIVE METHOD IN METAL MASK STEP

摘要

forming a metal layer on a semiconductor substrate; forming a porous anti-reflection oxide layer on the metal layer; forming a photoresist layer on the porous oxide layer; and forming a photoresist pattern by phtotolithographical process. Pref. the porous oxide is O3TEOS. The reduction of the light reflection minimizes a notching effect of the photoresist pattern.