发明名称 |
Method of forming semiconductor crystal and semiconductor device |
摘要 |
A thin semiconductor film having at least one an edge is formed on a base whose material is different from the material of the thin semiconductor film. A laser beam, for example, is applied to the semiconductor film thereby to melt the semiconductor film including the edge for thereby beading the edge upwardly. The melted semiconductor film including the edge is solidified and hence recrystallized into a semiconductor crystal. A plurality of spaced reflecting films may be formed on the thin semiconductor film before the laser beam is applied. Various semiconductor devices including a thin-film transistor, a solar cell, and a bipolar transistor may be fabricated of the semiconductor crystal.
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申请公布号 |
US5431126(A) |
申请公布日期 |
1995.07.11 |
申请号 |
US19930079553 |
申请日期 |
1993.06.22 |
申请人 |
SONY CORPORATION |
发明人 |
SAMESHIMA, TOSHIYUKI;HARA, MASAKI;SANO, NAOKI;PAL, GOSAIN D.;KONO, ATSUSHI;WESTWATER, JONATHAN;USUI, SETSUO |
分类号 |
H01L21/02;H01L21/20;H01L21/268;H01L21/336;H01L21/84;H01L27/12;H01L29/78;H01L29/786;(IPC1-7):C30B13/30 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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