发明名称 MANUFACTURING METHOD OF SELFALIGNMENT PHASE SHIFT MASK
摘要 The method comprises a process for shaping platinum and silicon on the quartz substrate, a process for defining shading region to etch platinum and silicon selectively, and a process for inflating the etched silicon doubly by heat oxide. The method has advantages that checking and amendment are easy and simple and CD(critical dimension) process is of high reliability.
申请公布号 KR950007476(B1) 申请公布日期 1995.07.11
申请号 KR19920001989 申请日期 1992.02.12
申请人 LG SEMICONDUCTOR CO., LTD. 发明人 PARK, CHI - KYUN
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
代理机构 代理人
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