发明名称 |
MANUFACTURING METHOD OF SELFALIGNMENT PHASE SHIFT MASK |
摘要 |
The method comprises a process for shaping platinum and silicon on the quartz substrate, a process for defining shading region to etch platinum and silicon selectively, and a process for inflating the etched silicon doubly by heat oxide. The method has advantages that checking and amendment are easy and simple and CD(critical dimension) process is of high reliability.
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申请公布号 |
KR950007476(B1) |
申请公布日期 |
1995.07.11 |
申请号 |
KR19920001989 |
申请日期 |
1992.02.12 |
申请人 |
LG SEMICONDUCTOR CO., LTD. |
发明人 |
PARK, CHI - KYUN |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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