MAKING METHOD OF VERTICAL MOS TRANSISTOR

摘要

integrating polysilicon (2) and a isolating film(3) in order on the silicon substrate(1) to shape the form of island by patterning; developing an epitaxial layer(4) selectively; removing the isolating film(3) by wet-etching; shaping a gate isolating film(5) and a poly silicon layer(6) in order; dry-etching the poly silicon layer(6) to form a side wall gate(6a); forming a field oxide film(9); forming a gate capping oxide film(10) surrounding the side wall gate(6a) by heat treatment; executing source/drain ion injection, vapor deposition of an isolating film, contact area opening and formation of metal electrodes.