Data output buffer for semiconductor memory e.g. DRAM or SRAM

摘要

The semiconductor memory has numerous memory cells, lack for a data signal. The latter is supplied to the buffer over an input line from each cell. A pull-up driver is incorporated between a supply source and an output line and is driven in response to the data signal first logic state from the input line. A pull-down driver is incorporated between the basic voltage source and the output line and is operated complementarily to the pull-up driver is response to the data signal second logic state from the input line. Parallel to the pull-up driver is coupled an ancillary pull-up driver and is driven by a control during predetermined time period.