发明名称 METHOD AND APPARATUS FOR PROCESSING SURFACE WITH PLASMA UNDER ATMOSPHERIC PRESSURE, METHOD OF PRODUCING SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING INK-JET PRINTING HEAD
摘要 Gas discharge is caused in a predetermined gas under around the atmospheric pressure to create a plasma. Organic substances contained in the gas or organic substances which are liquid at normal temperature and applied to an object to be processed are dissociated and excited, producing active species. Using the active species, an organic polymeric film is formed on the surface of the object. By selecting and combining the kinds of the organic substances and the discharge gas, water-repellent, hydrophilic, or very hard coating film can be formed as required. The polymerization rate can be raised or lowered. Further by changing the kinds of the substances and the gas, the adhesion of the film to an inorganic material such as of glass and an inactive organic material of a certain kind can be improved, though it has been insufficient by nature.
申请公布号 WO9518249(A1) 申请公布日期 1995.07.06
申请号 WO1994JP02196 申请日期 1994.12.22
申请人 SEIKO EPSON CORPORATION;MIYAKAWA, TAKUYA;AKIYAMA, HIROAKI;ASUKE, SHINTARO 发明人 MIYAKAWA, TAKUYA;AKIYAMA, HIROAKI;ASUKE, SHINTARO
分类号 B05D7/24;B41J2/16;C23C16/513;H01L23/49;H01L23/495 主分类号 B05D7/24
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