发明名称 ISOLATION FILM OF SEMICONDUCTOR DEVICE, COATING FLUID FOR FORMING THE FILM, AND PROCESS FOR PRODUCING THE FILM
摘要 An insulation film of semiconductor devices, which has a good film quality and excellent burying characteristics and is capable of thick coating and leveling. An insulation film (6) comprising a silane compound of the general formula SiHx(CH3)yO2-(x+y)/2 (wherein 0 < x < 1 , 0 < y < 1 and x+y </= 1 ) is formed by coating a stepped semiconductor substrate (1) with a coating fluid for forming insulation films mainly comprising a solution of a polymer preprared by cohydrolyzing a trialkoxysilane of the general formula SiH(OR)3, a methyltrialkoxysilane of the general formula SiCH3(OR)3 and a tetraalkoxysilane of the general formula Si(OR)4, drying the coating, and curing the same by heating in an inert gas atmosphere.
申请公布号 WO9518190(A1) 申请公布日期 1995.07.06
申请号 WO1994JP02225 申请日期 1994.12.27
申请人 KAWASAKI STEEL CORPORATION;NAKANO, TADASHI,;TOKUNAGA, KYOJI, 发明人 NAKANO, TADASHI,;TOKUNAGA, KYOJI,
分类号 C09D183/04;C09D183/05;H01L21/316;(IPC1-7):C09D183/05;H01L21/312 主分类号 C09D183/04
代理机构 代理人
主权项
地址