发明名称 |
ISOLATION FILM OF SEMICONDUCTOR DEVICE, COATING FLUID FOR FORMING THE FILM, AND PROCESS FOR PRODUCING THE FILM |
摘要 |
An insulation film of semiconductor devices, which has a good film quality and excellent burying characteristics and is capable of thick coating and leveling. An insulation film (6) comprising a silane compound of the general formula SiHx(CH3)yO2-(x+y)/2 (wherein 0 < x < 1 , 0 < y < 1 and x+y </= 1 ) is formed by coating a stepped semiconductor substrate (1) with a coating fluid for forming insulation films mainly comprising a solution of a polymer preprared by cohydrolyzing a trialkoxysilane of the general formula SiH(OR)3, a methyltrialkoxysilane of the general formula SiCH3(OR)3 and a tetraalkoxysilane of the general formula Si(OR)4, drying the coating, and curing the same by heating in an inert gas atmosphere.
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申请公布号 |
WO9518190(A1) |
申请公布日期 |
1995.07.06 |
申请号 |
WO1994JP02225 |
申请日期 |
1994.12.27 |
申请人 |
KAWASAKI STEEL CORPORATION;NAKANO, TADASHI,;TOKUNAGA, KYOJI, |
发明人 |
NAKANO, TADASHI,;TOKUNAGA, KYOJI, |
分类号 |
C09D183/04;C09D183/05;H01L21/316;(IPC1-7):C09D183/05;H01L21/312 |
主分类号 |
C09D183/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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