The semiconductor material testing involves radiating short-wavelength light for a short time period onto the material surface, generating carriers, and projecting an EM wave, within a mm to sub-mm range, onto the surface. The wave reflected from the semiconductor surface is measured to obtain decay curve for the injected energy carries. The surface lifetime and the lifetime of a thin surface layer is determined based on the decay curve. Pref. the EM energy is in a 30-3000GHz region. A negative bias may be applied to the irradiated surface or its vicinity.
申请公布号
DE4400097(A1)
申请公布日期
1995.07.06
申请号
DE19944400097
申请日期
1994.01.04
申请人
SCHOOL JUDICIAL PERSON IKUTOKU GAKUEN, ATSUGI, KANAGAWA, JP;MECS CORP., BISAI, AICHI, JP