发明名称 Semiconductor material lifetime testing
摘要 The semiconductor material testing involves radiating short-wavelength light for a short time period onto the material surface, generating carriers, and projecting an EM wave, within a mm to sub-mm range, onto the surface. The wave reflected from the semiconductor surface is measured to obtain decay curve for the injected energy carries. The surface lifetime and the lifetime of a thin surface layer is determined based on the decay curve. Pref. the EM energy is in a 30-3000GHz region. A negative bias may be applied to the irradiated surface or its vicinity.
申请公布号 DE4400097(A1) 申请公布日期 1995.07.06
申请号 DE19944400097 申请日期 1994.01.04
申请人 SCHOOL JUDICIAL PERSON IKUTOKU GAKUEN, ATSUGI, KANAGAWA, JP;MECS CORP., BISAI, AICHI, JP 发明人 OGITA, YOICHIRO, AIKAWA, KANAGAWA, JP;KUSAMA, TATEO, KAWASAKI, KANAGAWA, JP
分类号 G01N21/00;G01N22/00;G01R31/265;H01L21/66;(IPC1-7):H01L21/66;G01N21/55;G01R31/26 主分类号 G01N21/00
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