Method and apparatus for forming deposited film.

摘要

A plasma CVD method adapted to a roll-to-roll type or the like arranged such that the change rate of the temperature of the substrate before and after an i-type semiconductor layer is deposited is made rapid so as to prevent diffusion of impurities occurring due to annealing by constituting the structure in such a manner that the deposited film is formed on the substrate by the plasma CVD method while heating the elongated substrate moving in an i-layer discharging chamber at a rate of 4 DEG C/second or higher immediately in front of an inlet of the discharging chamber and cooling the same at a rate of 4 DEG C/second or higher immediately in the rear of an outlet of the discharging chamber so that a stacked-type photovoltaic device having a large area and free from scattering of the characteristics is continuously formed without deterioration of the characteristics occurring due to dispersion.