A process for preparing a superconducting thin film of compound oxide.

摘要

In order to prepare a well-crystalline thin film of compound oxide superconductor a silicon wafer, before the thin film of compound oxide superconductor is deposited on the silicon wafer, the silicon wafer is heated firstly at a temperature of higher than 900 DEG C in high vacuum of lower than 10<-><6> Torr, then a thin film of ZrO2 is deposited secondly on the silicon wafer, and finally, the thin film of ZrO2 deposited on the silicon wafer is annealed thirdly in air at a temperature of 800 to 850 DEG C.