发明名称 |
Method for fabricating semiconductor light integrated circuit. |
摘要 |
According to a method for fabricating a semiconductor light integrated circuit of the invention, a light waveguide layer and a clad layer are provided on a longitudinal aperture by epitaxial growth technique using a relatively low growth pressure. In contrast with those layers, a quantum well structure layer is selectively provided on the longitudinal aperture by epitaxial growth technique using a relatively high growth pressure. <IMAGE> <IMAGE> <IMAGE> |
申请公布号 |
EP0661783(A1) |
申请公布日期 |
1995.07.05 |
申请号 |
EP19940120765 |
申请日期 |
1994.12.27 |
申请人 |
NEC CORPORATION |
发明人 |
KATO, TOMOAKI, C/O NEC CORPORATION |
分类号 |
H01L21/205;B82Y10/00;B82Y20/00;B82Y40/00;G02F1/025;H01L33/00;H01S5/00;H01S5/026;H01S5/0625;H01S5/20;H01S5/227;H01S5/343 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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