| 摘要 |
<p>PURPOSE:To appropriately control the stress of a thin film and to improve the display quality and the yield in the display provided with a thin-film surface part including an electrical element in the display part by furnishing a stress control film having a higher thermal expansion coefficient than a semiconductor substrate and formed at a high temp. in the thin film on the substrate. CONSTITUTION:A PMOSFET is formed by the conventional method in the active layer 13 of a single-crystal silicon SOI substrate 10 having an embedded silicon oxide film 12 having a specified thickness. A stress control film 14 consisting of a silicon nitride film having a specified thickness is then formed at a specified temp. by vacuum CVD. The thermal expansion coefficient of the stress control film 14 is made higher than that of a silicon substrate 11. A pixel electrode and a protective film 15 are then formed to constitute an element substrate. A glass substrate 16 forming a counter electrode, etc., and the element substrate are stuck together with a seal 17 and divided into discrete liq. crystal cells, and a liq. crystal 18 is injected. Finally, the part of the substrate 11 corresponding to a display part 19 is etched off to expose a thin film 20 with built-in PMOSFET, etc.</p> |
