| 摘要 |
PURPOSE: To form a semiconductor device in accordance with quantum dynamically characteristics by using a mutli-chamber growth process apparatus for precisely controlling the process environment, to exclude pollution due to and minimize the number of manufacturing steps wherein the device is polluted. CONSTITUTION: A multi-chamber growth process apparatus having a first and a second chambers is provided. A semiconductor substrate 11 having a patterned insulator layer 13 is provided in the first chamber, and a charge channel region 15 is formed. Then, a part of the insulator layer 13 is removed, a barrier layer 19 is grown, and a charge channel layer 21 is formed. The semiconductor substrate 11 is transferred to the second chamber, and an opening part 23 is formed in the channel layer 21 so that a part of the opening part 23 covers a part of the channel region 15. After this is returned again to the first chamber, a source electrode 28 is formed so that this electrode is connected to a channel layer 17, and a drain electrode 29 is formed, thereby connecting this electrode to the channel layer 21. Then, a gate electrode 31 is formed so that this electrode is connected to a second barrier layer 27. |
