| 摘要 |
PURPOSE: To omit a phase transition annealing process by providing a fire-proof metal on, while being-adjacent to the surface of a silicon layer, sticking the metal which is to be used for forming a metal silicide alter as a layer such as to coat a fire-proof metal layer, and heating a wafer to a sufficiently high temperature to form a metal silicide using the metal. CONSTITUTION: A fire-proof metal is provided on a silicon surface by vapor- deposition using a metal pellet, etc. A titanium silicide layer is formed so as to cover a silicon layer on a semiconductor. A fire-proof metal is provided adjacent on the surface of the silicon layer, and a titanium layer is stuck so as to cover the fire-proof metal. Then, a wafer is heated to a temperature sufficient for at least partially forming, a titanium silicide from the titanium layer. |
