| 摘要 |
PURPOSE:To simplify the entire film formation process and its device by a method wherein, under condition that arc discharge plasma is continuously discharged, in a second vacuum chamber, material gas is intermittently supplied in the plasma while a silicon thin film is deposited. CONSTITUTION:A substrate 3 is disposed in a substrate holder 4. Mixed gas of argon gas and hydrogen gas at 1:1 is made to flow from the side of a first vacuum chamber 1 to generate arc discharge plasma. Further, by using a magnetic field caused by a coil 11 and a magnet to transform a plasma flow in a sheet manner, the plasma flow is transformed substantially in sheet to introduce it into a second vacuum chamber 2. After the plasma flow is stabilized, material gas is intermittently supplied from a material gas supply pipe. At this time, as an intermittent supply method, it is supplied within a range from 1:10 to 5:1 in the ratio of supply time to stop time. Thus, a silicon thin film having a uniform film thickness and high quality is fast and effectively formed on a substrate of a large area. |
