| 摘要 |
PURPOSE:To eliminate the need of molding a lead at a film carrier package for a semiconductor device by a method wherein a through hole is made in an insulating film corresponding to a part which includes a part of a region in which the insulating film is overlapped with a wiring pattern. CONSTITUTION:A wiring pattern 2 and a die attachment 3 (which is formed by executing an Ni-plating operation and an Au-plating operation to a Cu pattern) are formed on an insulating film 1, and a bump electrode 5 is formed in the external connection region of a package. The bump electrode 5 is formed in such a way that a through hole is made in the insulating film 1, that an Ni-plating operation is executed to the bottom part of the through hole and that a Cu-plating operation is executed in succession. An Ni-plating operation and an Au-plating operation are executed to its surface. When an LSI chip is assembled on a film carrier package, the die attachment 3 is coated with a mounting agent 7, and the LSI chip 6 is then mounted. After the fixation of the LSI chip 6 has been completed, the LSI chip 6 and the wiring pattern 2 are connected by a wire 8, and this assembly is covered and sealed with a cap 9. Thereby, it is not required to mold a lead. |
