| 摘要 |
<p>PURPOSE:To prevent variation of data at the time of verifying a program and normal read-out, with respect to an electrically erasable nonvolatile semiconductor memory. CONSTITUTION:In the electrically erasable non-volatile semiconductor memory, a sense amplifier 102 is provided with a MIS transistor T29 which can be arbitrarily operated in parallel with a transistor T28 which pulls down a bus line, in which a read signal and a write signal of a cell transistor are used in common, to the ground. And detecting sensitivity for continuity/non-continuity of the sense amplifier 102 is varied by operating the MIS transistor T29.</p> |
