| 摘要 |
PURPOSE: To form an identical electrode structure on two semiconductor element containing an electrode structure by first forming a semiconductor substrate, and forming a first layer of gate oxide, a second layer of polysilicon, a third layer of Wsi2 and a fourth layer of a mask material on the surface thereof as continuous layers. CONSTITUTION: An undoped polysilicon layer 24 is formed on silicon dioxide layers 20 and 22. This undoped polysilicon layer 24 is covered with an undoped tungsten silicide layer 26. Then, a semiconductor element 10 is covered with a mask layer 28 of silicon dioxide and silicon nitride. Then various layers on a silicon substrate 12 are patterned to form a gate electrode structure.
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