发明名称 |
Resistor-capacitor-transistor type integrated circuit, method for the manufacture of such a circuit and application to an oscillator |
摘要 |
A resistor-capacitor-transistor type of integrated circuit comprises mainly a non-self-aligned N diffusion bar 1 covered with a polysilicon plate, and a drain type N diffusion, self-aligned by the polysilicon plate. The resulting structure is a distributed resistor-capacitor-transistor quadripole whose main characteristics are that it is very compact and that the time taken by the capacitor to get discharged through the transistor is independent of the dimensions of the structure.
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申请公布号 |
US5430319(A) |
申请公布日期 |
1995.07.04 |
申请号 |
US19940246070 |
申请日期 |
1994.05.19 |
申请人 |
SGS-THOMSON MICROELECTRONICS, S.A. |
发明人 |
FOURNEL, RICHARD P.;TAILLIET, FRANCOIS |
分类号 |
H01L21/8234;H01L27/07;H01L27/088;H03B5/20;H03K3/0231;H03K3/86;(IPC1-7):H01L27/04;H03K3/354 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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