| 摘要 |
PURPOSE: To obtain a device and a method for emitting light from a semiconductor host body that can modulate the brightness of light with a high frequency by changing an external electric field between both edges of an emission element that can be excited by light from a P-N diode which is arranged in the same semiconductor base body. CONSTITUTION: A light-emitting element includes a quantum well 5 that can emit light with a fundamental wavelength, when no external electric field exists and two reflectors 8 and 9, a micro-cavity with a resonance wavelength closely corresponding to the fundamental wavelength of the quantum well, and electrodes 2 and 13 for controlling the brightness of the micro-cavity by changing the wavelength of the quantum well by supplying an electric field between both terminals of the micro-cavity. |
