| 摘要 |
PURPOSE: To provide a method for forming a fine pattern in which the degree of integration of a semiconductor device is improved by forming a photosensitive film pattern, so that critical value is kept constant. CONSTITUTION: A pattern object material layer 1 and a photosensitive film are formed in this order on a semiconductor substrate, and then by using a mask, the surface of the photosensitive film is selectively exposed to light, to be formed into a pattern 2A. Then, using TMDS and HMDS, Si component is diffused on the surface of the photosensitive film, and a uniform, thin and sylylated photosensitive material part is formed on a non-exposed region, and a photosensitive material part 6 patterned into a lens-like shape is formed on an exposed region. To make an edge part of the lens-like photosensitive material 6 easy to remove, the photosensitive material layer sylylated into a specified thickness from the surface and the photosensitive film are plasma- etched, to form a sylylated photosensitive material pattern in which the patterned region is reset accurately. Then the photosensitive film exposed by photosensitive material patterning, using oxygen-band plasma, is selectively pattern-exposed by anisotropic etching. |
