| 摘要 |
A method for fabricating a top gate type polysilicon TFT liquid crystal display by: forming an active layer on a thin film transistor-forming region of a buffer layer atop a transparent substrate; forming a gate insulating film, gate electrode on the active region and a gate line implanting impurity ions in the active layer by use of the gate electrode as a mask so as to form a source region and a drain region; depositing an insulating film; forming contact holes in the insulating film, exposing the source region and the drain region therethrough; forming a transparent electrode on a picture cell of the insulating film; depositing a semiconductor layer doped with high density impurity and a metal layer, in due order; and applying an etch to the semiconductor layer and the metal layer selectively as to form a source electrode and a data line which are connected with the source region and to form a drain electrode which interconnects the drain region with the transparent electrode.
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