| 摘要 |
A method for manufacture of radiation-emitting diodes includes manufacturing a layer sequence containing a radiation-generating pn-junction on a substrate wafer manufacturing contact layers for electrical connections on an upper face of the layer sequence and on an underside of the substrate wafer, etching trenches defining the size and shape of the area of individual pn-junctions of individual diodes being manufactured, providing a protective layer extending over the upper face contact layers and the etched trenches, subdividing the wafer having the layer sequence, the contact layers, and the protective layer thereon into individual diodes having lateral faces, after the subdividing, etching the lateral faces which are not provided with the protective layer to make the lateral faces into rough surfaces, and removing the protective layer following etching of the lateral faces.
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