| 摘要 |
A method of discharge processing of a semiconductor comprises the steps of: providing a low-resistivity portion on the semiconductor; and application of a given voltage through the low-resistivity portion between the semiconductor and a tool electrode suitably positioned with respect to the semiconductor to discharge the voltage. In the conventional photolithography technique, formation of a through-hole with a good straightness is difficult because of side etching. On the other hand, the prior art discharge processing is difficult to process a semiconductor because a potential barrier occurs, so that a high voltage is required for discharge processing. However, the high voltage deteriorates the semiconductor. In the discharge processing of the invention, a relative low voltage can be used for discharge processing of a semiconductor by providing the low-resistivity portion on the semiconductor. The low-resistivity portion may be formed by deposition of aluminum.
|
