| 摘要 |
PURPOSE: To manufacture a high equality semiconductor hetero-structure of gallium arsenide of germanium by exposing a germanium surface to an environment in which substantially no arsenic is present, depositing a gallium layer on the surface, then growing a gallium arsenide layer. CONSTITUTION: A substrate 10 is introduced into a growth chamber where no arsenic is present, and exposure is made by attaching/detaching an oxide on a Ge surface 11. Then, the germanium surface 11 is covered with a preliminary layer of gallium. After the gallium preliminary layer is grown, a GaAs 12 is grown. The advantage of his method is that it promotes two-dimensional growth of a single region of gallium arsenide. Therefor, an anti-phase border is removed, and threading dislocation, freely slides in GaAs to generate a long misfit dislocation at a GaAs/Ge interface. As a result, a high quality GaAs/Ge hetero-structure with which optoelectronic devices are manufactured is obtained.
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