Self-aligned method for forming polysilicon word lines on top of gate electrodes to increase capacitance of a stacked capacitor in a DRAM cell

摘要

A method is described for forming a dynamic random access memory cell capacitor in which polysilicon word lines are formed in a self-aligned method on top of the gate electrodes of the memory cell wherein the polysilicon word lines act to increase the surface area and hence to increase the capacitance of the capacitor.