| 摘要 |
<p>PURPOSE:To enable easy formation of circular etching configuration and to improve strength to stress by using a wafer comprising a material which is hard to etch as a mask wafer and by back-etching a silicon wafer by dry etch ing alone. CONSTITUTION:A mask 3 during back etching is aligned with the rear of a bonding wafer 1 whose surface is patterned. As for mask 3, a material which is not etched during dry etching of silicon such as quartz, Cu and Au is used, and it is manufactured by shaping a circular hole. In the state, dry etching is carried out by plasma etching, etc., wherein SF6, Ar, N2 mixture gas, etc., are used and etching is carried out as far as a bonding surface 2 of the bonding wafer 1. Thereby, accurate circular back etch is possible and high strength can be acquired.</p> |
