发明名称 Semiconductor integrated circuit device having internal step-down power voltage generator with auxiliary current path for keeping step-down power voltage constant
摘要 A word line driver incorporated in a semiconductor memory device is powered by an internal step-down voltage generator for energizing a selected word line, and an address transition detecting circuit causes an n-channel enhancement type switching transistor to temporally turn on between the address transition and completion of a charging operation on the selected word line, thereby preventing the internal step-down power voltage from undesirable decay.
申请公布号 US5430682(A) 申请公布日期 1995.07.04
申请号 US19940184931 申请日期 1994.01.24
申请人 NEC CORPORATION 发明人 ISHIKAWA, KIMIYASU;HASHIMOTO, KIYOKAZU
分类号 G11C11/41;G11C5/14;G11C8/08;G11C11/407;G11C11/413;H03K19/00;(IPC1-7):G11C11/40 主分类号 G11C11/41
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