发明名称 |
Method of forming a stacked capacitor using sidewall spacers and local oxidation |
摘要 |
A method for fabricating a capacitors on a dynamic random access memory (DRAM) cell having increased capacitance was achieved. The capacitor is fabricated on a silicon substrate having an active device region. The device region contains a field effect transistor (FET), having one capacitor aligned over and contacting the source/drain of the FET in the device region. The capacitor is increased in capacitance by forming a double recess in the bottom electrodes of the storage capacitors. The method of forming the double recess utilizes a sidewall spacer and local oxidation technique. After forming the bottom electrode having the double recess an insulating layer having a high dielectric constant is deposited as the inter-electrode insulator and a stop electrode is formed, completing the storage capacitor and the dynamic random access memory (DRAM) storage cell.
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申请公布号 |
US5429980(A) |
申请公布日期 |
1995.07.04 |
申请号 |
US19940318423 |
申请日期 |
1994.10.05 |
申请人 |
UNITED MICROELECTRONICS CORPORATION |
发明人 |
YANG, MING-TZONG;CHEN, ANCHOR;HSUE, CHEN-CHIU |
分类号 |
H01L21/02;H01L21/8242;H01L27/108;(IPC1-7):H01L21/70;H01L21/00 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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