MANUFACTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE:To provide a dry etching technique by which films of a metal having a high melting point, such as tungsten, etc., can be machined with high dimensional accuracy. CONSTITUTION:At the time of dry-etching a W film 29 deposited on a semiconductor substrate 1 by using an etching gas containing a fluorine gas, the shape of the pattern is controlled by providing a Ti film 28 underneath the film 29 in advance and depositing a TiF layer 31 produced under a low vapor pressure as a result of the reaction between the fluorine and Ti film 28 on the side wall of the pattern.