| 摘要 |
PURPOSE:To provide a two-dimensional electron gas heterostructure on which abnormal current-voltage characteristics, caused by donor level, are hardly generated when compared with the conventional structure, and also the scattering of two-dimensional electron gas, caused by donor distribution, is hardly generated. CONSTITUTION:In the two-dimensional electron gas heterostructure provided with a channel part and an electron feeding part, two layer Si donor doped regions 31a and 31b are formed in a GaAs layer 31 corresponding to the well layer of a quantum well 35 constituted by a GaAs layer (well layer) 31 and AlGaAs layers (barrier layer) 33a and 33b in such a manner that they are in parallel with the GaAs layer 31. The channel part is composed of an InGaAs layer 37 which is provided making contact with the barrier layer 33b. |
