| 摘要 |
PURPOSE:To provide the opening smooth for the shoulder and good in the machining accuracy, by immersing the protective film of substrate into etching solution, after drying etching on the way of thickness from the surface for the substrate protection film. CONSTITUTION:The resist mask 4 is overlaid on the surface protection film SiO2 3, and the film 3 is plasma-etched on the way of thickness of the film 3, remaining SiO2 by about 0.1 mu at the bottom of the hole 7. Next, the remaining film is etched by immersing it in NH4F solution, forming the hole 8. At this time, the SiO23 is opened with smooth shape with side etching even for the surface in contact with the resist mask 4. The mask is removed and the Al electrode 9 is provided. Since the shoulder of the hole 8 is smooth, no open wire is caused, and further, the remaining SiO2 film is thin, the accuracy of size of the hole 8 is very excellently formed with wet etching. |
